triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 28-31 ghz ka band hpa primary applications satellite ground terminal point-to-point radio key features 0.25 um phemt technology 18 db nominal gain 34.5 dbm nominal p1db 40 dbm otoi typical bias 6 v @ 2.1 a chip dimensions 4.290 mm x 3.019 mm 10 11 12 13 14 15 16 17 18 19 28 28.5 29 29.5 30 30.5 31 frequency (ghz) gain (db) bias conditions: vd = 6 v, id = 2..1 a 31 31.5 32 32.5 33 33.5 34 34.5 35 28 28.5 29 29.5 30 30.5 31 frequency (ghz) pout @ p1db (dbm)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table i maximum ratings symbol parameter 5/ value notes v + positive supply voltage 8 v 4/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 3.0 a 4/ | i g | gate supply current 62 ma p in input continuous wave power 24 dbm p d power dissipation 18.4 w 3/ 4/ t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from 7.4 e+6 to 4.6 e+5 hours. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table ii dc probe test (ta = 25 c 5 c) symbol parameter minimum maximum unit idss (q35)* saturated drain current 15 70.5 ma gm (q35)* transconductance 33 79.5 ms v p pinch-off voltage -1.5 -0.5 v bvgs (q35)* breakdown voltage gate- source -30 -11 v bvgd (q35)* breakdown voltage gate- drain -30 -11 v * q35 is a 150 um test fet table iii autoprobe fet parameter measurement conditions fet parameters test conditions i dss : maximum drain current (i ds ) with gate voltage (v gs ) at zero volts. v gs = 0.0 v, drain voltage (v ds ) is swept from 0.5 v up to a maximum of 3.5 v in search of the maximum value of i ds ; voltage for i dss is recorded as vdsp. g m : transconductance; i dss ? ids 1 () vg1 for all material types, v ds is swept between 0.5 v and vdsp in search of the maximum value of i ds . this maximum i ds is recorded as ids1. for intermediate and power material, ids1 is measured at v gs = vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i ds to 0.5 ma/mm. v bvgd : breakdown voltage, gate-to-drain; gate-to-drain breakdown current (i bd ) = 1.0 ma/mm of gate width. drain fixed at ground, source not connected (floating), 1.0 ma/mm forced into gate, gate-to-drain voltage (v gd ) measured is v bvgd and recorded as bvgd; this cannot be measured if there are other dc connections between gate- drain, gate-source or drain-source. v bvgs : breakdown voltage, gate-to-source; gate-to- source breakdown current (i bs ) = 1.0 ma/mm of gate width. source fixed at ground, drain not connected (floating), 1.0 ma/mm forced into gate, gate-to-source voltage (v gs ) measured is v bvgs and recorded as bvgs; this cannot be measured if there are other dc connections between gate- drain, gate-source or drain-source.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table v thermal information* parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to backside of carrier) vd = 6v i d = 2.048 a pdiss = 12.288 w 127.65 4.69 7.4e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * this information is a result of a thermal model analysis. table iv rf wafer characterization test (t a = 25 c + 5 c) (vd = 6v, id = 2.048a 5%) parameter unit min typical max frequency ghz 28 31 output p1db dbm 33.5 34.5 small signal gain db 16 18 input return loss db -6 output return loss db -6 output toi dbm 40
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. preliminary measured data bias conditions: vd = 6 v, id = 2.1 a 31 31.5 32 32.5 33 33.5 34 34.5 35 28 28.5 29 29.5 30 30.5 31 frequency (ghz) pout @ p1db (dbm) 10 11 12 13 14 15 16 17 18 19 28 28.5 29 29.5 30 30.5 31 frequency (ghz) gain (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. chip assembly & bonding diagram note: please refer to page 8 for a magnified view of the chip assembly and bonding diagram
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. chip assembly and bonding diagram
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advanced product information december 14, 2001 TGA4501-EPU 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c.
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